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1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

Identifieur interne : 003547 ( Main/Repository ); précédent : 003546; suivant : 003548

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

Auteurs : RBID : Pascal:11-0299620

Descripteurs français

Pascal (Inist)
- Courant seuil, Laser semiconducteur, Laser point quantique, Rendement quantique, Gallium Arséniure, Indium Arséniure, Composé ternaire, InGaAs/GaAs, InGaAs, As Ga In, Laser InGaAs, 4255P.

English descriptors

KwdEn :
- Gallium Arsenides, Indium Arsenides, Quantum dot lasers, Quantum yield, Semiconductor lasers, Ternary compounds, Threshold current.

Abstract

InGaAs/(Al)GaAs quantum dot lasers emitting at 1100 nm are developed with a relatively low In content of 28% used for dot formation and an appropriate laser design to allow for high power emission. In comparison with an InGaAs QD laser with a similar design but a higher In content of 60% the newly developed lasers exhibit an improved temperature stability of the threshold current and internal quantum efficiency.

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Pascal:11-0299620

Le document en format XML

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<author><name sortKey="Pavelescu, E M" uniqKey="Pavelescu E">E.-M. Pavelescu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A</s1>
<s2>077190 Bucharest</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
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<sZ>5 aut.</sZ>
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<country>Roumanie</country>
<wicri:noRegion>077190 Bucharest</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gilfert, C" uniqKey="Gilfert C">C. Gilfert</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Technische Physik, University of Kassel, Heinrich-Plett-Str. 40</s1>
<s2>34132 Kassel</s2>
<s3>DEU</s3>
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<country>Allemagne</country>
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<author><name sortKey="Weinmann, P" uniqKey="Weinmann P">P. Weinmann</name>
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<s2>97074 Würzburg</s2>
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<author><name sortKey="Danila, M" uniqKey="Danila M">M. Danila</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A</s1>
<s2>077190 Bucharest</s2>
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<author><name sortKey="Dinescu, A" uniqKey="Dinescu A">A. Dinescu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A</s1>
<s2>077190 Bucharest</s2>
<s3>ROU</s3>
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<country>Roumanie</country>
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<author><name sortKey="Jacob, M" uniqKey="Jacob M">M. Jacob</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Technische Physik, University of Kassel, Heinrich-Plett-Str. 40</s1>
<s2>34132 Kassel</s2>
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<country>Allemagne</country>
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<settlement type="city">Cassel (Hesse)</settlement>
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<author><name sortKey="Kamp, M" uniqKey="Kamp M">M. Kamp</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universitat Würzburg, Am Hubland</s1>
<s2>97074 Würzburg</s2>
<s3>DEU</s3>
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<sZ>7 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bavière</region>
<region type="district" nuts="2">District de Basse-Franconie</region>
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<author><name sortKey="Reithmaier, J P" uniqKey="Reithmaier J">J.-P. Reithmaier</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Technische Physik, University of Kassel, Heinrich-Plett-Str. 40</s1>
<s2>34132 Kassel</s2>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Kassel</region>
<settlement type="city">Cassel (Hesse)</settlement>
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</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0299620</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0299620 INIST</idno>
<idno type="RBID">Pascal:11-0299620</idno>
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<seriesStmt><idno type="ISSN">0022-3727</idno>
<title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Quantum dot lasers</term>
<term>Quantum yield</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>Threshold current</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Courant seuil</term>
<term>Laser semiconducteur</term>
<term>Laser point quantique</term>
<term>Rendement quantique</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Composé ternaire</term>
<term>InGaAs/GaAs</term>
<term>InGaAs</term>
<term>As Ga In</term>
<term>Laser InGaAs</term>
<term>4255P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">InGaAs/(Al)GaAs quantum dot lasers emitting at 1100 nm are developed with a relatively low In content of 28% used for dot formation and an appropriate laser design to allow for high power emission. In comparison with an InGaAs QD laser with a similar design but a higher In content of 60% the newly developed lasers exhibit an improved temperature stability of the threshold current and internal quantum efficiency.</div>
</front>
</TEI>
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<fA05><s2>44</s2>
</fA05>
<fA06><s2>14</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications</s1>
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<fA11 i1="01" i2="1"><s1>PAVELESCU (E.-M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GILFERT (C.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>WEINMANN (P.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>DANILA (M.)</s1>
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<fA11 i1="05" i2="1"><s1>DINESCU (A.)</s1>
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<fA11 i1="06" i2="1"><s1>JACOB (M.)</s1>
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<fA11 i1="07" i2="1"><s1>KAMP (M.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>REITHMAIER (J.-P.)</s1>
</fA11>
<fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A</s1>
<s2>077190 Bucharest</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Technische Physik, University of Kassel, Heinrich-Plett-Str. 40</s1>
<s2>34132 Kassel</s2>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universitat Würzburg, Am Hubland</s1>
<s2>97074 Würzburg</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA20><s2>145104.1-145104.4</s2>
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<fA21><s1>2011</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
<s2>5841</s2>
<s5>354000192912780080</s5>
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<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>10 ref.</s0>
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<fA47 i1="01" i2="1"><s0>11-0299620</s0>
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<fA60><s1>P</s1>
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<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>InGaAs/(Al)GaAs quantum dot lasers emitting at 1100 nm are developed with a relatively low In content of 28% used for dot formation and an appropriate laser design to allow for high power emission. In comparison with an InGaAs QD laser with a similar design but a higher In content of 60% the newly developed lasers exhibit an improved temperature stability of the threshold current and internal quantum efficiency.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Courant seuil</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Threshold current</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Laser point quantique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Quantum dot lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Rendement quantique</s0>
<s5>41</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Quantum yield</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>52</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>52</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>InGaAs/GaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Laser InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>206</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
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1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri